IXFN360N15T2

N-channel Power MOSFET featuring a low on-resistance of 0.0035 Ohms at 25°C and a continuous drain current capability of 360A. Designed for high-power switching applications, this device offers a maximum drain-source voltage of 150V and a gate-source voltage of ±20V. It operates with a threshold voltage typically between 2V and 4V, ensuring efficient switching characteristics. The MOSFET exhibits a low gate charge (Qg) for fast switching speeds.