N-channel silicon Metal-oxide Semiconductor FET, a power field-effect transistor featuring 800V breakdown voltage and a low on-resistance of 0.14 ohms. This single-element device offers a continuous drain current of 53A and operates up to a maximum temperature of 150°C. Encased in a MINIBLOC-4 plastic package, it includes 4 terminals with upper terminal positioning.
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| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Terminal Position | UPPER |
| Number of Elements | 1 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
