N-Channel Power MOSFET featuring 500V drain-source voltage and 61A continuous drain current. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor offers a low on-resistance of 0.085 ohms. Designed for high-power applications, it operates up to a maximum temperature of 150°C and has four terminals with the upper terminal position.
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| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Terminal Position | UPPER |
| Number of Elements | 1 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |