N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-power applications. Features a continuous drain current (I(D)) of 82A and a maximum drain-source voltage (V(DS)) of 600V. Offers a low on-resistance (R(DS(on))) of 0.075 ohms, ensuring efficient power transfer. This single-element device is housed in a plastic MINIBLOC-4 package with four terminals, positioned at the upper end. Operates reliably up to a maximum temperature of 150°C.
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| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Terminal Position | UPPER |
| Number of Elements | 1 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
