This device is an N-channel enhancement-mode power MOSFET rated for 100 V drain-to-source voltage and 180 A continuous drain current at case temperature. It uses TrenchT2 and HiPerFET technology to achieve a maximum on-resistance of 6 mOhm at 10 V gate drive and 50 A drain current. The transistor is avalanche rated and includes a fast intrinsic rectifier, with maximum power dissipation of 480 W at 25°C case temperature. It is supplied in a through-hole TO-220-3/TO-220AB package and operates over a -55°C to 175°C junction temperature range.
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Littelfuse IXFP180N10T2 technical specifications.
| FET Type | N-Channel |
| Technology | MOSFET |
| Drain to Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) @ 25°C | 180A |
| Drive Voltage | 10V |
| Rds On (Max) @ Id, Vgs | 6mOhm |
| Threshold Voltage Vgs(th) Max | 4V |
| Gate Charge (Qg) Max | 185nC |
| Gate-Source Voltage (Max) | ±20V |
| Input Capacitance (Ciss) Max | 10500pF |
| Power Dissipation (Max) | 480W |
| Operating Junction Temperature | -55 to 175°C |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Pulsed Drain Current (Idm) | 450A |
| Forward Transconductance (gfs) | 50 typ, 88 maxS |
| Output Capacitance (Coss) | 945pF |
| Reverse Transfer Capacitance (Crss) | 100pF |
| Thermal Resistance Junction-to-Case | 0.31°C/W |
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
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