N-Channel Silicon Metal-Oxide Semiconductor FET, a single-element power field-effect transistor. Features a continuous drain current of 90A and a maximum drain-source voltage of 200V. Offers a low on-resistance of 0.022 ohms. Operates up to a maximum temperature of 175°C with three terminals in a single position.
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| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
