High-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. Features a robust 600V collector-emitter voltage rating and a continuous collector current capability of 200A. Optimized for low conduction losses and fast switching speeds, ensuring efficient operation. Ideal for use in power supplies, motor drives, and inverters.
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Technical Specifications
Littelfuse IXGN200N60B3 technical specifications.
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Littelfuse IXGN200N60B3 Datasheet
Download the complete datasheet for Littelfuse IXGN200N60B3 to view detailed technical specifications.
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