This device is a single N-channel power MOSFET rated for 100 V drain-to-source voltage and 180 A drain current. It is specified with a maximum drain-source on-resistance of 6.4 mΩ and a rated power dissipation of 480 W. The MOSFET has a 151 nC gate charge, 20 V maximum gate-source voltage, and switching times including 33 ns turn-on delay, 42 ns turn-off delay, 54 ns rise time, and 31 ns fall time. It operates from -55 °C to +175 °C and is supplied in a surface-mount TO-263-3 (D2PAK) package.
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| FET Type | N-Channel |
| Number of Channels | 1 |
| Drain-to-Source Voltage | 100V |
| Continuous Drain Current | 180A |
| Drain-Source On Resistance Max | 6.4mΩ |
| Rated Power Dissipation | 480W |
| Gate Charge | 151nC |
| Gate-Source Voltage Max | 20V |
| Turn-On Delay Time | 33ns |
| Turn-Off Delay Time | 42ns |
| Rise Time | 54ns |
| Fall Time | 31ns |
| Operating Temperature Min | -55°C |
| Operating Temperature Max | 175°C |
| Gate Threshold Voltage | 4.5V |
| Input Capacitance | 6900pF |
| Mounting Method | Surface Mount |
