High-performance Insulated Gate Bipolar Transistor (IGBT) offering exceptional switching speed and low conduction losses. Features a robust design for demanding power electronics applications. Optimized for efficient operation in high-frequency switching circuits.
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Technical Specifications
Littelfuse IXXN110N65B4H1 technical specifications.
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Littelfuse IXXN110N65B4H1 Datasheet
Download the complete datasheet for Littelfuse IXXN110N65B4H1 to view detailed technical specifications.
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