High-performance Insulated Gate Bipolar Transistor (IGBT) offering a 650V breakdown voltage and 100A continuous collector current. Features a low Vce(sat) for reduced conduction losses and fast switching speeds for improved efficiency. Designed for demanding power switching applications.
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Technical Specifications
Littelfuse IXYN100N65C3H1 technical specifications.
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Littelfuse IXYN100N65C3H1 Datasheet
Download the complete datasheet for Littelfuse IXYN100N65C3H1 to view detailed technical specifications.
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