High-performance Insulated Gate Bipolar Transistor (IGBT) offering a 650V breakdown voltage and 100A continuous collector current. Features a low Vce(sat) for reduced conduction losses and fast switching speeds for improved efficiency. Designed for demanding power switching applications.
Checking distributor stock and pricing after the page loads.
Littelfuse IXYN100N65C3H1 technical specifications.
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
