High-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. Features a maximum collector-emitter voltage of 450V and a continuous collector current rating of 40A. Optimized for efficient switching with low on-state voltage drop and fast switching speeds. Ideal for use in power supplies, motor control, and industrial automation systems.
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Littelfuse IXYX40N450HV technical specifications.
| REACH | unknown |
| Military Spec | False |
