This automotive-qualified N-channel power MOSFET is rated for 600 V drain-to-source voltage and 34 A continuous drain current at 25 °C. It uses a TO-247AD package and provides a maximum 0.1 Ω on-resistance at 25 °C, 56 nC typical gate charge, and 3230 pF input capacitance. The device is avalanche rated and includes a fast intrinsic diode with 164 ns typical reverse recovery time. Power dissipation is rated at 540 W, and the junction operating range is -55 °C to 150 °C. It is intended for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, motor drives, and robotics or servo controls.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Littelfuse-IXYS IXFH34N60X2A datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Littelfuse-IXYS IXFH34N60X2A technical specifications.
| Drain-Source Voltage | 600V |
| Continuous Drain Current | 34A |
| Pulsed Drain Current | 68A |
| On-Resistance Max @ 25 C | 0.1Ohm |
| Gate Charge | 56nC |
| Thermal Resistance Junction-to-Case | 0.23K/W |
| Input Capacitance | 3230pF |
| Reverse Recovery Time Typ | 164ns |
| Power Dissipation | 540W |
| Gate-Source Voltage Continuous | ±30V |
| Gate-Source Voltage Transient | ±40V |
| Gate Threshold Voltage | 3.5 to 5.0V |
| Operating Junction Temperature | -55 to 150°C |
| Package Type | TO-247 |
Download the complete datasheet for Littelfuse-IXYS IXFH34N60X2A to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
