This device is a single N-channel enhancement-mode power MOSFET in the Q Class HiPerFET family. It is rated for 500 V drain-source voltage and 48 A continuous drain current at 25 °C, with a maximum on-resistance of 100 mΩ at 25 °C. The part uses a TO-247 PLUS package and is specified with 190 nC gate charge, 481 W power dissipation, and 0.26 K/W junction-to-case thermal resistance. It is intended for DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, and AC motor control. The manufacturer lists the product status as not for new designs.
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Littelfuse-IXYS IXFX48N50Q technical specifications.
| Drain-Source Voltage | 500V |
| Continuous Drain Current | 48A |
| On-Resistance RDS(on) Max @ 25 C | 100mΩ |
| Gate Charge | 190nC |
| Power Dissipation | 481W |
| Junction-to-Case Thermal Resistance | 0.26K/W |
| Input Capacitance Ciss | 7000pF |
| Output Capacitance Coss | 960pF |
| Reverse Transfer Capacitance Crss | 230pF |
| Gate-Source Threshold Voltage | 2.0 to 4.0V |
| Transconductance gfs | 30 to 42S |
| Reverse Recovery Time trr | 250ns |
| Operating Junction Temperature | -55 to 150°C |
| Gate-Source Voltage Continuous | ±20V |
| Source-Drain Diode Voltage | 1.5V |
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