This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-to-source voltage and 100 A continuous drain current at 25 °C case temperature. It uses trench DMOS technology to reduce on-resistance and support fast switching operation. The maximum drain-source on-resistance is 6.2 mΩ at 10 V gate drive and 10 mΩ at 4.5 V gate drive. The device is housed in a TO-251 package with 110 W power dissipation and a junction operating range from -55 °C to +150 °C. Typical applications include motor drives, UPS systems, and DC-DC converters.
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Lonten LNH06R062 technical specifications.
| Transistor type | N-channel MOSFET |
| Drain-source voltage | 60V |
| Continuous drain current | 100A |
| Continuous drain current at 100°C | 76A |
| Pulsed drain current | 400A |
| Gate-source voltage | ±20V |
| Power dissipation | 110W |
| Operating junction temperature range | -55 to +150°C |
| Drain-source on-resistance at VGS=10V | 6.2 maxmΩ |
| Drain-source on-resistance at VGS=4.5V | 10 maxmΩ |
| Gate threshold voltage | 1.0 to 3.0V |
| Total gate charge | 130 typnC |
| Input capacitance | 6080 typpF |
| Reverse recovery time | 50 typns |
| Thermal resistance junction-to-case | 1.13°C/W |
| Package | TO-251 |
| RoHS | Yes |
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