This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-source voltage and 80 A continuous drain current at 25 °C case temperature. It is specified with a maximum drain-source on-resistance of 6.2 mΩ at 10 V gate drive and 10 mΩ at 4.5 V gate drive. The transistor is supplied in a PPAK5×6 package and supports fast switching, high avalanche capability, and a total gate charge of 130 nC typical. Operating and storage temperature range from -55 °C to +150 °C, and the datasheet lists motor drives, UPS equipment, and DC-DC converters as typical applications.
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Lonten LNN06R062 technical specifications.
| Transistor Type | N-Channel Power MOSFET |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 80A |
| Continuous Drain Current at 100°C | 58A |
| Pulsed Drain Current | 280A |
| Gate-Source Voltage | ±20V |
| On-Resistance at VGS=10V | 6.2 maxmΩ |
| On-Resistance at VGS=4.5V | 10 maxmΩ |
| Gate Threshold Voltage | 1.0 to 3.0V |
| Power Dissipation | 96W |
| Avalanche Energy | 259mJ |
| Junction-to-Case Thermal Resistance | 1.3°C/W |
| Input Capacitance | 6080 typpF |
| Output Capacitance | 393 typpF |
| Reverse Transfer Capacitance | 192 typpF |
| Total Gate Charge | 130 typnC |
| Reverse Recovery Time | 50 typns |
| Reverse Recovery Charge | 80 typnC |
| Operating Junction Temperature | -55 to +150°C |
| Package | PPAK5×6 |
Download the complete datasheet for Lonten LNN06R062 to view detailed technical specifications.
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