This N-channel power MOSFET uses shielded gate trench DMOS technology for fast and efficient switching. It is rated for 85 V drain-source voltage, 120 A continuous drain current at 25 °C case temperature, and 192 W power dissipation, with 4.1 mΩ maximum on-resistance at 10 V gate drive. The device supports improved dv/dt capability, 100% avalanche energy screening, and operation from -55 °C to +150 °C junction temperature. It is supplied in a through-hole TO-220F-3 package and is intended for motor drives, UPS equipment, and DC-DC converters.
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Lonten LSGC085R041W3 technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 85V |
| Continuous Drain Current | 120 @ Tc=25°CA |
| Continuous Drain Current | 101 @ Tc=100°CA |
| Pulsed Drain Current | 480A |
| Gate-Source Voltage | ±20V |
| Avalanche Energy | 566mJ |
| Power Dissipation | 192W |
| Storage Temperature Range | -55 to +150°C |
| Operating Junction Temperature Range | -55 to +150°C |
| Thermal Resistance Junction-to-Case | 0.65°C/W |
| Thermal Resistance Junction-to-Ambient | 65°C/W |
| Drain-Source On-Resistance | 4.1 max @ VGS=10V, ID=50A, TJ=25°CmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Input Capacitance | 6090pF |
| Output Capacitance | 962pF |
| Reverse Transfer Capacitance | 19.6pF |
| Turn-On Delay Time | 31ns |
| Rise Time | 32.8ns |
| Turn-Off Delay Time | 136ns |
| Fall Time | 47.3ns |
| Gate Resistance | 2.4Ω |
| Gate-to-Source Charge | 30.6nC |
| Gate-to-Drain Charge | 20nC |
| Total Gate Charge | 91nC |
| Output Charge | 152nC |
| Continuous Source Current | 120A |
| Pulsed Source Current | 480A |
| Diode Forward Voltage | 1.4V |
| Reverse Recovery Time | 86.5ns |
| Reverse Recovery Charge | 200nC |
| RoHS | Yes |
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