This N-channel enhancement-mode power MOSFET uses shielded gate trench DMOS technology to reduce on-state resistance and support fast switching. It is rated for 100 V drain-source voltage, 155 A continuous drain current at 25 °C, and 208 W power dissipation at 25 °C. The device specifies 4.2 mΩ typical and 4.7 mΩ maximum RDS(on) at VGS = 10 V, with 65 nC typical total gate charge and a ±20 V gate-source rating. It is offered in a TO-220 package and is intended for high-efficiency switching applications.
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Lonten LSGC10R047 technical specifications.
| Channel Type | N-Channel |
| Technology | Shielded gate trench DMOS |
| Drain-Source Voltage | 100V |
| Continuous Drain Current at 25°C | 155A |
| Power Dissipation at 25°C | 208W |
| On-Resistance Typ. at VGS=10V | 4.2mΩ |
| On-Resistance Max. at VGS=10V | 4.7mΩ |
| Total Gate Charge Typ. at VGS=10V | 65nC |
| Gate-Source Voltage | ±20V |
| Gate Threshold Voltage Typ. | 3V |
| Package | TO-220 |
