Power Field-Effect Transistor, 5.8A I(D), 30V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236AB, 3 PIN
LRC Leshan Radio LN2306LT1G technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
