This 100 V N-channel enhancement-mode MOSFET is specified with a maximum RDS(on) of 4.2 mΩ at VGS = 10 V and supports 60 A continuous drain current at TC = 25 °C. It is housed in a DFN5060-8B package and is supplied in 3000-piece tape-and-reel packaging. The device is rated for a ±20 V gate-to-source voltage, 125 W power dissipation at case temperature, and a -55 °C to +150 °C junction and storage temperature range. The datasheet also states that the product material complies with RoHS requirements and is halogen free.
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LRC LN76042NDT1WG technical specifications.
| Drain-to-Source Voltage | 100V |
| Gate-to-Source Voltage | ±20V |
| Continuous Drain Current (TC=25°C) | 60A |
| Continuous Drain Current (TC=100°C) | 50A |
| Continuous Drain Current (TA=25°C) | 21A |
| Pulsed Drain Current | 120A |
| Power Dissipation (TC=25°C) | 125W |
| Power Dissipation (TA=25°C) | 2W |
| Drain-to-Source On-Resistance | 4.2 max @ VGS=10V, ID=20AmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Total Gate Charge | 102nC |
| Input Capacitance | 4690pF |
| Output Capacitance | 786pF |
| Reverse Transfer Capacitance | 76pF |
| Thermal Resistance, Junction-to-Case | 1.2°C/W |
| Operating Junction and Storage Temperature Range | -55 to +150°C |
| RoHS | Yes |
| Halogen Free | Yes |
Download the complete datasheet for LRC LN76042NDT1WG to view detailed technical specifications.
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