A 600 V N-channel power MOSFET uses super-junction technology for low on-resistance and reduced gate charge. It is rated for 33 A continuous drain current at 25 °C case temperature and has a maximum drain-source on-resistance of 0.115 Ω at 10 V gate drive. The device supports ±30 V gate-source voltage, 99 A pulsed drain current, and 700 mJ single-pulse avalanche energy. It operates over a -55 °C to 150 °C temperature range in a TO-220F package with tube packing. The package is Pb-free plated, halogen-free, RoHS compliant, and suited to PFC power stages, switching applications, and adapters.
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| Transistor Type | N-channel MOSFET |
| Drain-Source Voltage | 600V |
| Maximum Drain-Source Voltage at Maximum Junction Temperature | 650V |
| Maximum Drain-Source On-Resistance | 0.115Ω |
| Typical Drain-Source On-Resistance | 0.104Ω |
| Typical Gate Threshold Voltage | 3V |
| Gate Threshold Voltage Range | 2 to 4V |
| Continuous Drain Current at 25 °C Case | 33A |
| Continuous Drain Current at 100 °C Case | 20.9A |
| Pulsed Drain Current | 99A |
| Gate-Source Voltage | ±30V |
| Power Dissipation | 35W |
| Single-Pulse Avalanche Energy | 700mJ |
| MOSFET dv/dt Ruggedness | 50V/ns |
| Maximum Operating Junction Temperature | 150°C |
| Storage Temperature | -55 to 150°C |
| Maximum Junction-to-Case Thermal Resistance | 3.6°C/W |
| Typical Input Capacitance | 2760pF |
| Typical Output Capacitance | 1780pF |
| Typical Reverse Transfer Capacitance | 91pF |
| Typical Total Gate Charge | 79nC |
| Typical Turn-On Delay Time | 50ns |
| Typical Turn-Off Delay Time | 240ns |
| Maximum Diode Forward Voltage | 1.4V |
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
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