The BUZ900DP is a single-element power MOSFET with a maximum operating temperature of 150°C and a maximum power dissipation of 125W. It has a continuous drain current rating of 16A and a gate-to-source voltage rating of 14V. The device is packaged in a TO-3 case and is mounted through a hole. The BUZ900DP has a turn-off delay time of 50ns and a turn-on delay time of 100ns.
PackageTO-3
MountingThrough Hole
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Technical Specifications
Magnatec BUZ900DP technical specifications.
General
| Package/Case | TO-3 |
| Continuous Drain Current (ID) | 16A |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 14V |
| Height | 8.7mm |
| Length | 39mm |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 100ns |
| Width | 25mm |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.