The BUZ900P is a power MOSFET with a maximum operating temperature of 150°C, a maximum power dissipation of 125W, and a package case of TO-247. It has a continuous drain current of 8A and a drain to source voltage of 160V. The device is also compliant with Reach SVHC regulations. The BUZ900P has an input capacitance of 500pF and a turn-off delay time of 50ns, as well as a turn-on delay time of 100ns.
PackageTO-247
MountingThrough Hole
Power125W
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Technical Specifications
Magnatec BUZ900P technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 160V |
| Gate to Source Voltage (Vgs) | 14V |
| Height | 21.46mm |
| Input Capacitance | 500pF |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Power Dissipation | 125W |
| Reach SVHC Compliant | Yes |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 100ns |
| Width | 2.49mm |
Compliance
| RoHS | Compliant |
Datasheet
Magnatec BUZ900P Datasheet
Download the complete datasheet for Magnatec BUZ900P to view detailed technical specifications.
No datasheet is available for this part.