This device is a single N-channel power MOSFET in a D2-PAK package. It is rated for 100 V drain-to-source voltage and ±20 V gate-to-source voltage. The manufacturer lists 174 A drain current, 3.5 V threshold voltage, and 4.8 mΩ on-resistance at 10 V gate drive. The listed total gate charge is 150 nC at 10 V gate drive.
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Maxpower Semiconductor MXP100N4P8AF technical specifications.
| Channel Configuration | Single-N |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Drain Current | 174A |
| Threshold Voltage | 3.5V |
| On-Resistance | 4.8 at VGS=10VmΩ |
| Total Gate Charge | 150 at VGS=10VnC |
| Package | D2-PAK |
