This device is an N-channel power MOSFET in the MaxFET family. It is rated for 85 V drain-to-source voltage and ±20 V gate-to-source voltage. The product table lists 159 A drain current capability. Its on-resistance is listed as 3.9 mΩ typical and 4.7 mΩ maximum at 10 V gate drive. The device is offered in a D2-PAK package and has a typical total gate charge of 112 nC at 10 V.
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Maxpower Semiconductor MXP85N4P7AF technical specifications.
| Configuration | Single-N |
| Drain-Source Voltage (VDS) | 85V |
| Gate-Source Voltage (VGS) | ±20V |
| Drain Current (ID) | 159A |
| On-Resistance Typ @ VGS=10V | 3.9mΩ |
| On-Resistance Max @ VGS=10V | 4.7mΩ |
| Total Gate Charge Typ @ VGS=10V | 112nC |
| Package | D2-PAK |
