PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a maximum collector current of 200mA and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 250MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 600mW. Through-hole mounting and RoHS compliant.
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| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 400mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 250MHz |
| Height | 4.7mm |
| hFE Min | 60 |
| Length | 4.7mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Width | 3.68mm |
| RoHS | Compliant |
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