
PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a maximum collector current of 200mA and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 250MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 600mW. Through-hole mounting and RoHS compliant.
MCC 2N3906-AP technical specifications.
Download the complete datasheet for MCC 2N3906-AP to view detailed technical specifications.
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