PNP Bipolar Junction Transistor (BJT) for small signal applications, featuring a 45V collector-emitter breakdown voltage and a maximum collector current of 200nA. This surface mount device operates with a 100MHz transition frequency and offers a minimum DC current gain (hFE) of 160. Housed in a SOT-23 package, it supports a maximum power dissipation of 310mW and operates across a temperature range of -55°C to 150°C.
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| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 700mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 160 |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 200nA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 310mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
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