PNP Bipolar Junction Transistor (BJT) for small signal applications, featuring a 45V collector-emitter breakdown voltage and a maximum collector current of 200nA. This surface mount device operates with a 100MHz transition frequency and offers a minimum DC current gain (hFE) of 160. Housed in a SOT-23 package, it supports a maximum power dissipation of 310mW and operates across a temperature range of -55°C to 150°C.
Frequency100MHz
PackageSOT-23
MountingSurface Mount
PolarityPNP
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Technical Specifications
MCC BC807-25-TP technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
hFE Min
160
Max Breakdown Voltage
45V
Max Collector Current
200nA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
310mW
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Transition Frequency
100MHz
Compliance
RoHS
Compliant
Datasheet
MCC BC807-25-TP Datasheet
Download the complete datasheet for MCC BC807-25-TP to view detailed technical specifications.
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