NPN silicon bipolar junction transistor, 2-element configuration, designed for surface mounting in a SOT-363 package. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 45V. Offers a transition frequency of 200MHz with a minimum hFE of 110. Operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 300mW. This RoHS compliant component is supplied on tape and reel.
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MCC BC847BS-TP technical specifications.
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 45V |
| RoHS | Compliant |
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