This device is an N-channel power MOSFET built with split gate trench technology for high-speed switching applications. It supports 100 V drain-source voltage, 80 A continuous drain current at 25°C case temperature, and 320 A pulsed drain current. The MOSFET is housed in a DFN5060 package and specifies a maximum drain-source on-resistance of 4.3 mΩ at 10 V gate drive and 6.3 mΩ at 4.5 V gate drive. Maximum junction temperature is 150°C, and the datasheet lists moisture sensitivity level 1. The device is halogen free and RoHS compliant with a lead-free finish.
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MCC MCAC80N10Y technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 80A |
| Drain-Source On-Resistance Max @ VGS=10V | 4.3mΩ |
| Drain-Source On-Resistance Max @ VGS=4.5V | 6.3mΩ |
| Gate Threshold Voltage | 1 to 3V |
| Pulsed Drain Current | 320A |
| Power Dissipation | 89W |
| Single Pulsed Avalanche Energy | 64mJ |
| Input Capacitance | 3375pF |
| Output Capacitance | 636pF |
| Total Gate Charge | 70nC |
| Operating Junction Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1.4°C/W |
| Moisture Sensitivity Level | 1 |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Finish | Lead Free |
Download the complete datasheet for MCC MCAC80N10Y to view detailed technical specifications.
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