
NPN Bipolar Junction Transistor (BJT) in a SOT-23 surface mount package. Features a 300V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 300mA. Offers a minimum DC current gain (hFE) of 25 and a transition frequency (fT) of 50MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. RoHS compliant and lead-free.
MCC MMBTA42-TP technical specifications.
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