The UMT1N-TP is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 150mW. The transistor is packaged in a SOT-363 case and is available in quantities of 3000 units per reel. It is compliant with RoHS regulations and has a gain bandwidth product of 140MHz.
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MCC UMT1N-TP technical specifications.
| Package/Case | SOT-363 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 140MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
| Transition Frequency | 140MHz |
| RoHS | Compliant |
Download the complete datasheet for MCC UMT1N-TP to view detailed technical specifications.
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