NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 15V and a maximum DC collector current of 0.05A. This single-element silicon transistor offers a minimum DC current gain of 20 at 3mA and 1V, with a maximum transition frequency of 600MHz. Housed in a 3-pin TO-92 plastic package with formed leads, suitable for through-hole mounting. Maximum power dissipation is 850mW, operating temperature range from -55°C to 150°C.
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Micro Commercial Components MPS918-AP technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-92 |
| Package/Case | TO-92 |
| Package Description | Plastic Header Style Package |
| Lead Shape | Formed |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 4.7(Max) |
| Package Width (mm) | 3.68(Max) |
| Package Height (mm) | 4.7(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 30V |
| Maximum Emitter Base Voltage | 3V |
| Maximum Collector-Emitter Voltage | 15V |
| Maximum DC Collector Current | 0.05A |
| Maximum Power Dissipation | 850mW |
| Material | Si |
| Minimum DC Current Gain | 20@3mA@1V |
| Maximum Transition Frequency | 600(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 374W0 |
| EU RoHS | Yes |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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