This device is a PNP silicon planar epitaxial transistor intended for general-purpose amplifier and medium-speed switching applications. The 2N2907A is complementary to the NPN 2N2222A family. The datasheet specifies 60 V collector-base breakdown voltage, 60 V collector-emitter breakdown voltage, 5 V emitter-base breakdown voltage, 0.6 A collector current, and 1.8 W total power dissipation at TC = 25°C. The 2N2907A version is packaged in a TO-18 metal can and is rated for junction temperature up to 200°C with storage from -65°C to 200°C.
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| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | TO-18 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Eccn Code | EAR99 |
| HTS Code | 8541.21.00.75 |
| REACH | unknown |
| Military Spec | False |
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