A single Schottky barrier rectifier engineered for high-efficiency, low-voltage, and high-frequency rectification and freewheeling applications. It features a maximum reverse voltage of 20 V and an average forward current of 1.0 A, with a low forward voltage of 0.45 V at 1 A and a reverse current of 1.0 mA at 20 V. The rectifier offers robust performance with a forward surge current capacity of 50 A (8.3ms half-sine) and a high voltage rate of change (dV/dt) of 10000 V/µs. Operating and storage junction temperature ranges span -55°C to +150°C. Housed in a compact, surface-mount Powermite 1 (DO-216AA) package, it incorporates a metallic bottom to eliminate flux entrapment and optimize heat dissipation, providing a thermal resistance junction-to-case of 15 °C/W. High-efficiency Schottky barrier rectifier designed for low-voltage, high-frequency rectification and freewheeling applications. Housed in the compact, thermally efficient Powermite 1 package with a metallic bottom to eliminate flux entrapment and optimize heat dissipation.
MICROCHIP TECHNOLOGY UPS5817E3/TR7 technical specifications.
| Diode Type | Schottky |
| Configuration | Single |
| Average Forward Current | 1.0A |
| Maximum Reverse Voltage | 20V |
| Forward Voltage | 0.45 @ 1 AV |
| Forward Surge Current | 50 (8.3ms half-sine)A |
| Maximum Reverse Current | 1.0 @ 20 VmA |
| Operating Junction Temperature | -55 to +150°C |
| Storage Temperature Range | -55 to +150°C |
| Package Case | Powermite 1 (DO-216AA) |
| Mounting Type | Surface Mount |
| Thermal Resistance Junction-to-Case | 15°C/W |
| Voltage Rate of Change (dV/dt) | 10000V/µs |
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