The 1N5811US/TR13 is a general purpose rectifier diode with a peak reverse repetitive voltage of 150V and a maximum continuous forward current of 6A. It features a peak non-repetitive surge current of 125A and a peak forward voltage of 0.875V at 4A. The diode is packaged in a MELF E-MELF package with a 2-pin configuration. It operates over a temperature range of -65 to 175 degrees Celsius.
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| Package Family Name | MELF |
| Package/Case | E-MELF |
| Pin Count | 2 |
| PCB | 2 |
| Package Length (mm) | 5.72(Max) |
| Package Width (mm) | 3.76(Max) |
| Package Height (mm) | 3.76(Max) |
| Mounting | Surface Mount |
| Type | Switching Diode |
| Configuration | Single |
| Peak Reverse Repetitive Voltage | 150V |
| Maximum Continuous Forward Current | 6A |
| Peak Non-Repetitive Surge Current | 125A |
| Peak Forward Voltage | 0.875@4AV |
| Peak Reverse Current | 5uA |
| Peak Reverse Recovery Time | 30ns |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 175°C |
| Operating Junction Temperature | -65 to 175°C |
| Cage Code | 60991 |
| EU RoHS | No |
| HTS Code | 8541100080 |
| Schedule B | 8541100080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Microchip 1N5811US/TR13 to view detailed technical specifications.
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