This silicon Schottky barrier rectifier diode is rated for 1 A average forward current and 40 V repetitive peak reverse voltage. Microchip identifies the device as a Schottky diode family member and provides a dedicated manufacturer datasheet for 1N5819. The family is described as metallurgically bonded and intended for high-reliability applications.
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Microchip 1N5819 technical specifications.
| Element Configuration | Single |
| Max Operating Temperature | 110°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Peak Non-Repetitive Surge Current | 50A |
| RoHS | Compliant |
Download the complete datasheet for Microchip 1N5819 to view detailed technical specifications.
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