The 1N6629US/TR13 is a single switching diode with a peak reverse repetitive voltage of 800V and a maximum continuous forward current of 1.4A. It features a non-lead E-MELF package with a surface mount configuration. The diode operates over a temperature range of -65°C to 150°C and has a peak forward voltage of 1.7V at 3A.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Microchip 1N6629US/TR13 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | MELF |
| Package/Case | E-MELF |
| Lead Shape | No Lead |
| Pin Count | 2 |
| PCB | 2 |
| Package Length (mm) | 5.72(Max) |
| Package Width (mm) | 3.76(Max) |
| Package Height (mm) | 3.76(Max) |
| Mounting | Surface Mount |
| Type | Switching Diode |
| Configuration | Single |
| Peak Reverse Repetitive Voltage | 800V |
| Maximum Continuous Forward Current | 1.4A |
| Peak Non-Repetitive Surge Current | 75A |
| Peak Forward Voltage | 1.7@3AV |
| Peak Reverse Current | 2uA |
| Peak Reverse Recovery Time | 60ns |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Operating Junction Temperature | -65 to 150°C |
| Cage Code | 60991 |
| EU RoHS | No |
| HTS Code | 8541100080 |
| Schedule B | 8541100080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Microchip 1N6629US/TR13 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
