The 2N3495 is a single PNP bipolar junction transistor with a maximum collector-base voltage of 120V and a maximum collector-emitter voltage of 120V. It has a maximum power dissipation of 600mW and is made of silicon material. The transistor has a minimum DC current gain of 35 at various current and voltage conditions. It operates within a temperature range of -65°C to 200°C. The 2N3495 is categorized as a bipolar small signal transistor.
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Technical Specifications
Microchip 2N3495 technical specifications.
General
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 120V |
| Maximum Emitter Base Voltage | 4.5V |
| Maximum Collector-Emitter Voltage | 120V |
| Maximum DC Collector Current | 0.1A |
| Maximum Power Dissipation | 600mW |
| Material | Si |
| Minimum DC Current Gain | 35@100uA@10V|40@1mA@10V|40@10mA@10V|40@50mA@10V |
| Maximum Transition Frequency | 150(Min)MHz |
| Category | Bipolar Small Signal |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
Compliance
| Cage Code | 60991 |
| EU RoHS | No |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Microchip 2N3495 Datasheet
Download the complete datasheet for Microchip 2N3495 to view detailed technical specifications.
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