N-channel enhancement mode power MOSFET featuring a 400V drain-source voltage and 14A continuous drain current. This single-element transistor is housed in a TO-3 metal package with a through-hole mounting configuration and three pins. It offers a maximum power dissipation of 4000mW and operates across a temperature range of -55°C to 150°C.
PackageTO-3
MountingThrough Hole
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Technical Specifications
Microchip 2N6768 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-204-AA |
| Package/Case | TO-3 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 39.29 |
| Package Width (mm) | 26.42 |
| Package Height (mm) | 7.92 |
| Package Material | Metal |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 400V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 14A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 400@10VmOhm |
| Typical Gate Charge @ Vgs | 110(Max)@10VnC |
| Typical Gate Charge @ 10V | 110(Max)nC |
| Maximum Power Dissipation | 4000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 60991 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Microchip 2N6768 Datasheet
Download the complete datasheet for Microchip 2N6768 to view detailed technical specifications.
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