P-channel power MOSFET with 100V drain-source voltage and 6.5A continuous drain current. Features a TO-39 metal package with 3 through-hole pins, designed for single element configuration. Maximum power dissipation is 800mW, with an operating temperature range of -55°C to 150°C. Maximum gate-source voltage is ±20V, and gate threshold voltage is 4V.
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Microchip 2N6849 technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-205-AF |
| Package/Case | TO-39 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Height (mm) | 6.6(Max) |
| Package Diameter (mm) | 9.4(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Jedec | TO-205AF |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 6.5A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 540@10VmOhm |
| Typical Gate Charge @ Vgs | 34.8(Max)@10VnC |
| Typical Gate Charge @ 10V | 34.8(Max)nC |
| Maximum Power Dissipation | 800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 60991 |
| EU RoHS | No |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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