P-channel power MOSFET with 100V drain-source voltage and 6.5A continuous drain current. Features a TO-39 metal package with 3 through-hole pins, designed for single element configuration. Maximum power dissipation is 800mW, with an operating temperature range of -55°C to 150°C. Maximum gate-source voltage is ±20V, and gate threshold voltage is 4V.
PackageTO-39
MountingThrough Hole
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Technical Specifications
Microchip 2N6849 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-205-AF
Package/Case
TO-39
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Height (mm)
6.6(Max)
Package Diameter (mm)
9.4(Max)
Package Material
Metal
Mounting
Through Hole
Jedec
TO-205AF
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
6.5A
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
540@10VmOhm
Typical Gate Charge @ Vgs
34.8(Max)@10VnC
Typical Gate Charge @ 10V
34.8(Max)nC
Maximum Power Dissipation
800mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
60991
EU RoHS
No
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Microchip 2N6849 Datasheet
Download the complete datasheet for Microchip 2N6849 to view detailed technical specifications.
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