Power Field-Effect Transistor, 8A I(D), 1200V, 1.68ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Microchip APTM120H140FT1G technical specifications.
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
