Power Field-Effect Transistor, 295A I(D), 1200V, 0.009ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Microchip APTMC120AM09CT3AG technical specifications.
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
