Power Field-Effect Transistor, 220A I(D), 1200V, 0.012ohm, 6-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Microchip APTMC120TAM12CTPAG technical specifications.
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
