1Mb Parallel EEPROM memory IC, featuring a 120ns access time and 128K x 8 organization. This non-volatile memory component operates with a 4.5V to 5.5V supply voltage range and is housed in a 32-pin TSOP surface-mount package with tin-matte plating. It offers a write cycle time of 10ms maximum and includes write protection, operating within a temperature range of -40°C to 85°C.
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| Access Time | 120ns |
| Access Time-Max | 120ns |
| Package/Case | TSOP |
| Contact Plating | Tin, Matte |
| Density | 1Mb |
| Interface | Parallel |
| Lead Free | Lead Free |
| Max Operating Temperature | 85°C |
| Max Supply Voltage | 5.5V |
| Memory Size | 1Mb |
| Memory Type | Non-Volatile, , EEPROM |
| Min Operating Temperature | -40°C |
| Min Supply Voltage | 4.5V |
| Mount | Surface Mount |
| Operating Supply Voltage | 5V |
| Organization | 128KX8 |
| Package Quantity | 156 |
| Packaging | Tray |
| Programming Voltage | 5.5V |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Supply Current | 40mA |
| Supply Voltage-Nom | 5.5V |
| Write Cycle Time-Max (tWC) | 10ms |
| Write Protection | YES |
| RoHS | Compliant |
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