N-channel small signal MOSFET in a SOT-89 package, offering 90V drain-to-source breakdown voltage and 360mA continuous drain current. Features 6Ω drain-to-source resistance and 150pF input capacitance. Operates from -55°C to 150°C with a maximum power dissipation of 1.6W. Designed for surface mount applications, this component has a fall time of 16ns and turn-on/off delay times of 12ns and 15ns respectively.
PackageSOT-89
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Microchip DN1509N8-G technical specifications.
General
Package/Case
SOT-89
Continuous Drain Current (ID)
360mA
Drain to Source Breakdown Voltage
90V
Drain to Source Resistance
6R
Drain to Source Voltage (Vdss)
90V
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
1.6mm
Input Capacitance
150pF
Lead Free
Lead Free
Length
4.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
6R
Reach SVHC Compliant
No
Turn-Off Delay Time
15ns
Turn-On Delay Time
12ns
Weight
0.001862oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Microchip DN1509N8-G Datasheet
Download the complete datasheet for Microchip DN1509N8-G to view detailed technical specifications.
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