N-channel small signal MOSFET in a SOT-89 package, offering 90V drain-to-source breakdown voltage and 360mA continuous drain current. Features 6Ω drain-to-source resistance and 150pF input capacitance. Operates from -55°C to 150°C with a maximum power dissipation of 1.6W. Designed for surface mount applications, this component has a fall time of 16ns and turn-on/off delay times of 12ns and 15ns respectively.
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Microchip DN1509N8-G technical specifications.
| Package/Case | SOT-89 |
| Continuous Drain Current (ID) | 360mA |
| Drain to Source Breakdown Voltage | 90V |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 90V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.6mm |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Length | 4.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 6R |
| Reach SVHC Compliant | No |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.001862oz |
| Width | 2.6mm |
| RoHS | Compliant |
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