DN2470K4-G

N-Channel Power MOSFET, TO-252-3 package, featuring 700V drain-to-source breakdown voltage and 170mA continuous drain current. Offers 42 Ohm drain-to-source resistance (Rds On Max) and 2.5W power dissipation. Designed for surface mount applications, this silicon MOSFET exhibits a typical input capacitance of 540pF with fast switching speeds including 30ns turn-on delay and 45ns turn-off delay. Operates across a wide temperature range from -55°C to 150°C.