N-Channel Power MOSFET, TO-252-3 package, featuring 700V drain-to-source breakdown voltage and 170mA continuous drain current. Offers 42 Ohm drain-to-source resistance (Rds On Max) and 2.5W power dissipation. Designed for surface mount applications, this silicon MOSFET exhibits a typical input capacitance of 540pF with fast switching speeds including 30ns turn-on delay and 45ns turn-off delay. Operates across a wide temperature range from -55°C to 150°C.
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Microchip DN2470K4-G technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 170mA |
| Drain to Source Breakdown Voltage | 700V |
| Drain to Source Resistance | 42R |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 540pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 42R |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 30ns |
| Weight | 0.139332oz |
| Width | 6.1mm |
| RoHS | Compliant |
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