N-Channel Power MOSFET, TO-252-3 package, featuring 700V drain-to-source breakdown voltage and 170mA continuous drain current. Offers 42 Ohm drain-to-source resistance (Rds On Max) and 2.5W power dissipation. Designed for surface mount applications, this silicon MOSFET exhibits a typical input capacitance of 540pF with fast switching speeds including 30ns turn-on delay and 45ns turn-off delay. Operates across a wide temperature range from -55°C to 150°C.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Microchip DN2470K4-G technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
170mA
Drain to Source Breakdown Voltage
700V
Drain to Source Resistance
42R
Fall Time
60ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
540pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Rds On Max
42R
Turn-Off Delay Time
45ns
Turn-On Delay Time
30ns
Weight
0.139332oz
Width
6.1mm
Compliance
RoHS
Compliant
Datasheet
Microchip DN2470K4-G Datasheet
Download the complete datasheet for Microchip DN2470K4-G to view detailed technical specifications.
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