MICROCHIP

DN2530N3-G

Datasheet

Microchip

DN2530N3-G

Name: DN2530N3-G Microchip
Brand: Microchip
SKU: DN2530N3-G

300V N-CH JFET, 175mA, 12Ω, TO-92

N-channel small signal MOSFET in a TO-92 package, featuring a 300V drain-to-source breakdown voltage and 175mA continuous drain current. This through-hole mounted component offers a 12 Ohm drain-to-source resistance (Rds On Max) and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 10ns turn-on delay and 15ns fall time, with a maximum power dissipation of 740mW.

PackageTO-92

MountingThrough Hole

PolarityN-CHANNEL

Power740mW

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Technical Specifications

Microchip DN2530N3-G technical specifications.

General

Package/Case	TO-92
Continuous Drain Current (ID)	175mA
Drain to Source Breakdown Voltage	300V
Drain to Source Resistance	12R
Drain to Source Voltage (Vdss)	300V
Fall Time	15ns
Gate to Source Voltage (Vgs)	20V
Height	5.33mm
Input Capacitance	300pF
Lead Free	Lead Free
Length	5.21mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	740mW
Mount	Through Hole
Number of Channels	1
Number of Elements	1
Package Quantity	1000
Packaging	Bulk
Polarity	N-CHANNEL
Power Dissipation	740mW
Radiation Hardening	No
Rds On Max	12R
Reach SVHC Compliant	Unknown
Turn-Off Delay Time	15ns
Turn-On Delay Time	10ns
Weight	0.016oz
Width	4.19mm