N-channel small signal MOSFET in a TO-92 package, featuring a 300V drain-to-source breakdown voltage and 175mA continuous drain current. This through-hole mounted component offers a 12 Ohm drain-to-source resistance (Rds On Max) and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 10ns turn-on delay and 15ns fall time, with a maximum power dissipation of 740mW.
PackageTO-92
MountingThrough Hole
PolarityN-CHANNEL
Power740mW
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Technical Specifications
Microchip DN2530N3-G technical specifications.
General
Package/Case
TO-92
Continuous Drain Current (ID)
175mA
Drain to Source Breakdown Voltage
300V
Drain to Source Resistance
12R
Drain to Source Voltage (Vdss)
300V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
300pF
Lead Free
Lead Free
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
740mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
740mW
Radiation Hardening
No
Rds On Max
12R
Reach SVHC Compliant
Unknown
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip DN2530N3-G Datasheet
Download the complete datasheet for Microchip DN2530N3-G to view detailed technical specifications.
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