
N-channel small signal JFET in a SOT-89 package, featuring a 300V drain-source breakdown voltage and 200mA continuous drain current. This surface-mount device offers a low 12 Ohm drain-source resistance (Rds On Max) and a 10ns turn-on delay. Operating across a -55°C to 150°C temperature range, it supports a maximum power dissipation of 1.6W.
Microchip DN2530N8-G technical specifications.
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