N-channel small signal JFET in a SOT-89 package, featuring a 300V drain-source breakdown voltage and 200mA continuous drain current. This surface-mount device offers a low 12 Ohm drain-source resistance (Rds On Max) and a 10ns turn-on delay. Operating across a -55°C to 150°C temperature range, it supports a maximum power dissipation of 1.6W.
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Microchip DN2530N8-G technical specifications.
| Package/Case | SOT-89 |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 12R |
| Drain to Source Voltage (Vdss) | 300V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.6mm |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Length | 4.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 12R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.001862oz |
| Width | 2.6mm |
| RoHS | Compliant |
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