N-channel JFET with 350V drain-source breakdown voltage and 120mA continuous drain current. Features 25 Ohm drain-source resistance (Rds On Max) and 1W power dissipation. Operates across a temperature range of -55°C to 150°C. Packaged in TO-92 for through-hole mounting, with fast switching speeds including 10ns turn-on delay and 15ns turn-off delay.
PackageTO-92
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Microchip DN2535N3-G technical specifications.
General
Package/Case
TO-92
Continuous Drain Current (ID)
120mA
Drain to Source Breakdown Voltage
350V
Drain to Source Resistance
25R
Drain to Source Voltage (Vdss)
350V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
300pF
Lead Free
Lead Free
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
25R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip DN2535N3-G Datasheet
Download the complete datasheet for Microchip DN2535N3-G to view detailed technical specifications.
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