N-channel power MOSFET featuring 350V drain-to-source breakdown voltage and 500mA continuous drain current. This through-hole component offers 25 ohms drain-to-source resistance (Rds On Max) and 15W power dissipation. Operating across a temperature range of -55°C to 150°C, it exhibits fast switching characteristics with turn-on delay of 10ns and fall time of 20ns. Housed in a TO-220 package, this lead-free MOSFET is suitable for various power switching applications.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power15W
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Technical Specifications
Microchip DN2535N5-G technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
500mA
Drain to Source Breakdown Voltage
350V
Drain to Source Resistance
25R
Drain to Source Voltage (Vdss)
350V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
9.02mm
Input Capacitance
300pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
15W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
15W
Rds On Max
25R
Reach SVHC Compliant
Unknown
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Microchip DN2535N5-G Datasheet
Download the complete datasheet for Microchip DN2535N5-G to view detailed technical specifications.
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