N-channel power MOSFET featuring 350V drain-to-source breakdown voltage and 500mA continuous drain current. This through-hole component offers 25 ohms drain-to-source resistance (Rds On Max) and 15W power dissipation. Operating across a temperature range of -55°C to 150°C, it exhibits fast switching characteristics with turn-on delay of 10ns and fall time of 20ns. Housed in a TO-220 package, this lead-free MOSFET is suitable for various power switching applications.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power15W
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Technical Specifications
Microchip DN2535N5-G technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Breakdown Voltage | 350V |
| Drain to Source Resistance | 25R |
| Drain to Source Voltage (Vdss) | 350V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.02mm |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 15W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 15W |
| Rds On Max | 25R |
| Reach SVHC Compliant | Unknown |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Microchip DN2535N5-G Datasheet
Download the complete datasheet for Microchip DN2535N5-G to view detailed technical specifications.
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