N-channel power MOSFET with 400V drain-to-source breakdown voltage and 500mA continuous drain current. Features 25-ohm drain-to-source resistance (Rds On Max) and 15W power dissipation. Operates within a temperature range of -55°C to 150°C. Through-hole mounting in a TO-220 package. Includes fast switching characteristics with turn-on delay of 10ns and fall time of 20ns.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power15W
Quick Jump:
Technical Specifications
Microchip DN2540N5-G technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
500mA
Drain to Source Breakdown Voltage
400V
Drain to Source Resistance
25R
Drain to Source Voltage (Vdss)
400V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
9.02mm
Input Capacitance
300pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
15W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
15W
Radiation Hardening
No
Rds On Max
25R
Reach SVHC Compliant
Unknown
Threshold Voltage
-1.5V
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Microchip DN2540N5-G Datasheet
Download the complete datasheet for Microchip DN2540N5-G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
