
N-channel power MOSFET with 400V drain-to-source breakdown voltage and 500mA continuous drain current. Features 25-ohm drain-to-source resistance (Rds On Max) and 15W power dissipation. Operates within a temperature range of -55°C to 150°C. Through-hole mounting in a TO-220 package. Includes fast switching characteristics with turn-on delay of 10ns and fall time of 20ns.
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Microchip DN2540N5-G technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 25R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.02mm |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 15W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 15W |
| Radiation Hardening | No |
| Rds On Max | 25R |
| Reach SVHC Compliant | Unknown |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
| RoHS | Compliant |
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